##  [Hot Plasma Etching of Gallium Nitride](/archives/ldrd-annual-2019/energy-resource-security/19-FS-005) 

##   *Sara Harrison*  |  19-FS-005  

###  Executive Summary 

 We will demonstrate the feasibility of using modern inductively coupled plasma etch technology to fabricate ultra-smooth three-dimensional structures on gallium nitride. The fabrication of three-dimensional gallium nitride structures with high-quality surface morphologies is critical to the development of next-generation high-power electronic components with applications in support of energy security missions.