Gallium Nitride Superjunction Fin Field Effect Transistor

Lars Voss | 21-ERD-036

Executive Summary

This project will demonstrate gallium nitride superjunction power electronics to improve energy efficiency and decrease system size. Power electronics appear in almost all electricity-based devices, so successful development and adoption of this technology will lead to tremendous economy-wide savings of energy.

Publications, Presentations, and Patents

L. F. Voss, et al., 2021. "Prospects for Magnesium diffusion doping of GaN." Electrochemical Society. LLNL-ABS-821793.

Lawrence Livermore National Laboratory

| 7000 East Avenue • Livermore, CA 94550 | LLNL-WEB-846698

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