Ultra-Wide Bandgap Field-Emission Photocathodes for High-Power, High-Frequency Electronics

Clint Frye | 23-LW-055

Executive Summary

We are developing an optically-gated field emission photocathode from wide bandgap and ultrawide bandgap semiconductors to create a new class of vacuum microelectronics. This technology has the potential to outperform silicon microelectronics by six orders of magnitude or shrink existing vacuum tubes by a factor of a thousand in high-power, high-frequency applications such as radar, wireless communications, and pulsed power.